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Sichuan Zi Guan Photonics Technology Co., Ltd
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Payment Terms: | T/T |
Place of Origin: | Sichuan, China (Mainland) |
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Feature
Quantum-well technology structure, DFB Semiconductor Laser chip
Stable wavelength
High output power
Gas-tighttemperature controlpackaging
Application
Online Lasergasmonitoring
Gasanalysisinstrument
Rated extreme working conditions
parameter | Symbol | value | unit |
Laser diode forward current | If(LD) | 120 | mA |
Laser diode reverse current | Vr(LD) | 2 | V |
Backlight detector working current | If(PD) | 2 | mA |
Backlight detecto reverse voltage | Vr(PD) | 20 | V |
Refrigerator working current | ITEC | 2.4 | A |
Refrigerator working voltage | VTEC | 2.9 | V |
Working temperature | Topr | -20~+70 | ℃ |
Storage temperature | Tstg | -40~+85 | ℃ |
Lead bonding temperature/time | Tsld | 260/10 | ℃/s |
Gas absorption reference table
Gas composition | Absorption wavelength |
O2 | 761nm,764nm |
HF | 1268.7nm,1273nm,1278nm,1305nm |
H2O | 1368.59nm,1392nm |
NH3 | 1512nm |
C2H2 | 1532.68nm |
CO | 1567nm |
H2S | 1578nm,1590nm |
Co2 | 1580nm,2.0um |
C2H4 | 1620nm,1627nm |
CH4 | 1650.9nm,1653.7nm,1660nm |
Hcl | 1742nm |